Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4094-4106

  Hoefnagels, J P M ^a   Barrell, Y ^a   Kessels, W M M ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; FREE RADICALS; HYDROGENATION; MOLECULAR DYNAMICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROBABILITY; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SURFACE REACTIONS; THERMAL EFFECTS;

CAVITY RINGDOWN SPECTROSCOPY (CRDS); GAS PHASES; PLASMA DEPOSITION; THERMAL ACTIVATION;

AMORPHOUS SILICON;

EID: 7544251684     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793359     Document Type: Article

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