A study on the time evolution of SiH3 surface loss probability on hydrogenated amorphous silicon films in SiH4 rf discharges using infrared diode-laser absorption spectroscopy

Journal of Physics D: Applied Physics

Volumn 31, Issue 7, 1998, Pages 776-780

  Shiratani, Masaharu ^a   Kawasaki, Hiroharu ^a   Fukuzawa, Tsuyoshi ^a   Watanabe, Yukio ^a   Yamamoto, Yasuo ^b   Suganuma, Shinji ^b   Hori, Masaru ^b   Goto, Toshio ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMISORPTION; DENSITY MEASUREMENT (SPECIFIC GRAVITY); ELECTRIC DISCHARGES; ELECTRODES; INFRARED SPECTROSCOPY; PROBABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; SILANES;

SURFACE LOSS PROBABILITY;

SEMICONDUCTING FILMS;

EID: 0032492514     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/7/004     Document Type: Article

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