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Surface Science

Volumn 496, Issue 3, 2002, Pages 307-317

Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition

(3) Gupta, A a Yang, H a,b Parsons, G N a

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

Ab initio quantum chemical methods and calculations; Density functional calculations; Models of surface chemical reactions

Indexed keywords

ADSORPTION; CHEMICAL BONDS; DEPOSITION; DIFFUSION; FILM GROWTH; HYDROGEN; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; REACTION KINETICS; SILICON;

PHYSISORPTION; SURFACE ADSORPTION;

SURFACE CHEMISTRY;

EID: 0037050249 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01467-4 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.