Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges

Surface Science

Volumn 360, Issue 1-3, 1996, Pages

  Kae Nune, Patrick ^a   Perrin, Jérôme ^a   Jolly, Jacques ^a   Guillon, Jean ^a  

^a CNRS   (France)

Author keywords

Appearance potential spectroscopy; Atom solid interactions; Etching; Hydrogen; Surface chemical reaction

Indexed keywords

AMORPHOUS SILICON; DENSITY MEASUREMENT (SPECIFIC GRAVITY); DENSITY OF GASES; ETCHING; HYDROGEN; HYDROGENATION; IONIZATION; LIGHT EMISSION; MASS SPECTROMETRY; OXIDATION; PROBABILITY; STAINLESS STEEL;

APPEARANCE POTENTIAL SPECTROSCOPY; ATOM SOLID INTERACTIONS; SURFACE RECOMBINATION; THRESHOLD IONIZATION MASS SPECTROMETRY;

SURFACE PHENOMENA;

EID: 0043041072     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00732-7     Document Type: Article

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