High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in situ film diagnostics

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 43-48

  Kessels, W M M ^a   Van Den Oever, P J ^a   Hoefnagels, J P M ^a   Hong, J ^a   Houston, I J ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; DEPOSITION; ELLIPSOMETRY; FILM GROWTH; HYDROGEN; INFRARED SPECTROSCOPY; PLASMA DENSITY; PLASMA DIAGNOSTICS; PLASMAS;

ATTENUATED TOTAL REFLECTION INFRARED SPECTROSCOPY; DENSITY OF PLASMA RADICALS; IN SITU FILM DIAGNOSTICS; SPECTROSCOPIC ELLIPSOMETRY; THERMAL PLASMA;

AMORPHOUS SILICON;

EID: 0036920135     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a25.6     Document Type: Conference Paper

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