Kinetic study for the reactions of Si atoms with SiH4

Journal of Physical Chemistry A

Volumn 107, Issue 24, 2003, Pages 4838-4842

  Koi, Makoto ^a   Tonokura, Kenichi ^a   Tezaki, Atsumu ^a   Koshi, Mitsuo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; FLUORESCENCE; LASER APPLICATIONS; MOLECULES; PHOTOLYSIS; PRESSURE EFFECTS; PROBABILITY DENSITY FUNCTION; RATE CONSTANTS; SILICON; SILICON COMPOUNDS;

DENSITY FUNCTIONAL THEORY; LASER INDUCED FLUORESCENCE TECHNIQUE; LASER PHOTOLYSIS;

ATOMS;

EID: 0037532710     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp027793r     Document Type: Article

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