Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 1, 1998, Pages 278-289

  Perrin, Jérôme ^a,b   Shiratani, Masaharu ^c   Kae Nune, Patrick ^a   Videlot, Hervé ^a   Jolly, Jacques ^a   Guillon, Jean ^a  

^a CNRS   (France)

^b Balzers Process Systems   (France)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032351436     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580983     Document Type: Article

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