On the role of surface diffusion and its relation to the hydrogen incorporation during hydrogenated amorphous silicon growth

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 461-466

  Smets, A H M ^a   Kessels, W M M ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; CHEMICAL BONDS; COMPOSITION; DIFFUSION IN SOLIDS; GROWTH (MATERIALS); HYDROGEN; HYDROGENATION; INFRARED SPECTROSCOPY; ION BOMBARDMENT; SUBSTRATES; SURFACE PHENOMENA;

GROWTH FLUX; SURFACE SMOOTHENING;

AMORPHOUS SILICON;

EID: 1642520691     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a10.3     Document Type: Conference Paper

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