Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 3, 2001, Pages 1027-1028

  Kessels, W M M ^a   Boogaarts, M G H ^a   Hoefnagels, J P M ^a   Schram, D C ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; HYDROGENATION; IONIZATION; MASS SPECTROMETRY; PLASMAS; SILICON COMPOUNDS;

CAVITY RING DOWN SPECTROSCOPY (CRDS);

FILM GROWTH;

EID: 0035334046     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1365131     Document Type: Article

References (14)