Energy and spatial distributions of electron traps throughout SiO 2/Al2O3 stacks as the IPD in flash memory application

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 288-296

  Zheng, Xue Feng ^a   Zhang, Wei Dong ^a   Govoreanu, Bogdan ^b   Aguado, Daniel Ruiz ^b,c   Zhang, Jian Fu ^a   Van Houdt, Jan ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Al2O3; Dielectrics; Electron trap; Energy distribution; Flash memory; Floating gate; High ; Interpoly dielectric (IPD) layer; Pulsed C V

Indexed keywords

AL2O3; BAND GAPS; C-V MEASUREMENT; DIELECTRIC STACK; ELECTRON TRAP DENSITY; ENERGY DISTRIBUTION; ENERGY REGIONS; FLASH MEMORY CELL; FLOATING GATES; FUNDAMENTAL LIMITS; INTERPOLY DIELECTRICS; LIMITING FACTORS; MATERIALS AND PROCESS; MEMORY CELL; NARROW BANDS; ORDERS OF MAGNITUDE; POST DEPOSITION ANNEALING; SPATIAL DISTRIBUTION; STILL MISSING; TRAP ASSISTED TUNNELING; TRAP PROPERTIES;

ALUMINUM; DIELECTRIC MATERIALS; ELECTRIC CIRCUIT BREAKERS; ELECTRIC POWER DISTRIBUTION; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; GATE DIELECTRICS; ION BEAMS; SEMICONDUCTOR STORAGE; SILICON; SILICON COMPOUNDS; SIZE DISTRIBUTION;

FLASH MEMORY;

EID: 73349107117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035193     Document Type: Article

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