Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 4, 2006, Pages 509-515

  Crupi, Isodiana ^b   Degraeve, Robin ^c   Govoreanu, Bogdan ^c   Brunco, David P ^c   Roussel, Philippe J ^c   Van Houdt, Jan ^a,c  

^a IEEE

^b UNIVERSITY OF CATANIA   (Italy)

^c IMEC   (Belgium)

Author keywords

Bulk traps; Charge pumping (CP); Energy distribution; High dielectrics; Interface traps; Spatial profiling

Indexed keywords

ALUMINA; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRON TRAPS; INTERFACES (MATERIALS); SILICA;

BULK TRAPS; CHARGE PUMPING (CP); ENERGY DISTRIBUTION; HIGH-K DIELECTRICS; INTERFACE TRAPS; SPATIAL PROFILING;

MOSFET DEVICES;

EID: 33845596252     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.883152     Document Type: Article

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