Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Zhao, C Z ^a   Zhang, J F ^a   Zahid, M B ^a   Govoreanu, B ^b   Groeseneken, G ^b,c   De Gendt, S ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HAFNIUM COMPOUNDS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

CROSS SECTIONS; ELECTRON FLUENCIES; GATE CURRENTS; HFO2/HFSIO STACKS;

ELECTRON TRAPS;

EID: 33751112213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364043     Document Type: Article

References (31)

1. G. Groeseneken, in Proceedings of the 11th International Symposium on Physical and Failure Analysis of IC, Hsinchu, Taiwan, 2004 (IEEE, New York, 2004), pp. 147-155.
2. T. P. Ma, H. M. Bu, X. W. Wang, L. Y. Song, W. He, M. Wang, H. -H. Tseng, and P. J. Tobin, IEEE Trans. Device Mater. Reliab. 5, 36 (2005).
3. S. Zafar, A. Callegari, E. Gusev, and M. V. Fischetti, J. Appl. Phys. 93, 9298 (2003).
4. C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, and S. De Gendt, Microelectron. Eng. 80, 366 (2005).
5. G. Bersuker, J. H. Sim, C. D. Young, R. Choi, P. M. Zeitzoff, G. A. Brown, B. H. Lee, and R. W. Murto, Microelectron. Reliab. 44, 1509 (2004).
6. R. Degraeve, A. Kerber, Ph. Roussel, E. Cartier, T. Kauerauf, L. Pantisano, and G. Groeseneken, Tech. Dig. - Int. Electron Devices Meet. 2003, 935.
7. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002).
8. A. Kerber, Proceedings of IEEE 41st Annual Int. Reliab. Phys. Symp., Dallas, Texas, 2003, pp. 41-45.
9. A. Y. Kang, P. M. Lenahan, and J. F. Conley, Appl. Phys. Lett. 83, 3407 (2003).
10. G. Reimbold, J. Mitard, M. Casse, X. Carros, C. Leroux, L. Thevenod, and F. Martin, in Proceedings of the Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Dielectrics VIII, Quebec City, Canada, 2005 (Electrochemical Society, NJ, 2005), pp. 437-455.
11. J. F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 71, 725 (1992).
12. T. Schram, Microelectron. Reliab. 45, 779 (2005).
13. W. D. Zhang, J. F. Zhang, M. Lalor, D. Burton, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 49, 1868 (2002).
14. J. F. Zhang, S. Taylor, and W. Eccleston, J. Appl. Phys. 71, 5989 (1992).
15. M. Houssa, A. Stesmans, and M. M. Heyns, Semicond. Sci. Technol. 16, 427 (2001).
16. Y. Zhao and M. H. White, Solid-State Electron. 48, 1801 (2004).
17. B. Govoreanu, P. Blomme, K. Henson, J. V. Houdt, and K. D. Meyer, Solid-State Electron. 48, 617 (2004).
18. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
19. K. N. Yang, IEEE Trans. Electron Devices 47, 2161 (2000).
20. S. Mudanai, Y. Y. Fan, Q. Ouyang, A. F. Tasch, and S. K. Banerjee, IEEE Trans. Electron Devices 47, 1851 (2000).
21. Y. T. Hou, M. F. Li, H. Y. Yu, and D. L. Kwong, IEEE Electron Device Lett. 24, 96 (2003).
22. E. M. Vogel, K. Z. Ahmed, B. Hornung, W. K. Henson, P. K. McLarty, G. Lucovsky, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 45, 1350 (1998).
23. M. L. Roy, E. Lheurette, O. Vanbesien, and D. Lippens, J. Appl. Phys. 93, 2966 (2003).
24. Y. Y. Fan, R. E. Nieh, J. C. Lee, G. Lucovsky, G. A. Brown, L. F. Register, and S. K. Banerjee, IEEE Trans. Electron Devices 49, 1969 (2002).
25. M. H. Chang, J. F. Zhang, and W. D. Zhang, IEEE Trans. Electron Devices 53, 1347 (2006).
26. A. Shanware, Tech. Dig. - Int. Electron Devices Meet. 2003, 939.
27. J. H. Sim, S. C. Song, P. D. Kirsch, C. D. Young, R. Choi, D. L. Kwong, B. H. Lee, and G. Bersuker, Microelectron. Eng. 80, 218 (2005).
28. J. F. Zhang, C. Z. Zhao, M. B. Zahid, G. Groseneken, R. Degraeve, and S. De Gendt, IEEE Electron Device Lett. 27, 817 (2006).
29. C. D. Young, Microelectron. Reliab. 45, 806 (2005).
30. C. Leroux, J. Mitard, G. Ghibaudo, X. Garros, G. Reimbold, B. Guillaumot, and F. Martin, Tech. Dig. - Int. Electron Devices Meet. 2004, 737.
31. C. Shen, Tech. Dig. - Int. Electron Devices Meet. 2004, 733.