Al2O3 based flash interpoly dielectrics: A comparative retention study

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 238-241

  Wellekens, Dirk ^a   Blomme, Pieter ^a   Govoreanu, Bogdan ^a   De Vos, Joeri ^a   Haspeslagh, Luc ^a   Van Houdt, Jan ^a   Brunco, David P ^b   Van Der Zanden, Koen ^a  

^a IMEC   (Belgium)

^b Intel Corporation Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CHARGE; FLASH MEMORY; SILICA;

INTERPOLY DIELECTRIC (IPD); MEMORY CELLS;

ALUMINA;

EID: 84943200660     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307682     Document Type: Conference Paper

References (5)

1. Semiconductor Industry Association (SIA): International Technology Roadmap for Semiconductors (ITRS), online at http://public.itrs.net.
2. B. Govoreanu, D.P. Brunco, J. Van Houdt, "Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities," Solid-State Electronics 2005 (49), pp.1841-1848.
3. J. De Vos et al., "A scalable stacked gate NOR/NAND flash technology compatible with high-k and metal gates for sub 45nm generations," ICICDT 2006, in press.
4. P. Blomme A. Akheyar, J. Van Houdt, K. De Meyer, "Flash memory with high-k tunnel dielectrics: comparative retention study," Proc. ICMTD 2005, pp. 239-241.
5. 3," Appl. Phys. Lett. 2002 (81), pp. 1678-1680.