Defects generation in SIO2/HFO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 55-60

  Zahid, M B ^a   Degraeve, R ^b   Pantisano, L ^b   Zhang, J F ^a   Groeseneken, G ^b,c  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; HYDROGEN INORGANIC COMPOUNDS; VOLTAGE CONTROL;

DIELECTRIC BREAKDOWN MEASUREMENT RANGE; FAILURE TIMES; METAL GATE STACKS;

SILICON COMPOUNDS;

EID: 34548710332     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369868     Document Type: Conference Paper

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