Two types of neutral electron traps generated in the gate silicon dioxide

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 1868-1875

  Zhang, Wei Dong ^a   Zhang, Jian F ^a   Lalor, M ^a   Burton, D ^a   Groeseneken, Guido V ^b   Degraeve, Robin ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

Breakdown; Defect generation; Degradation; Instability; MOS devices; Reliability; Silicon dioxides; Traps

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRAPS; LEAKAGE CURRENTS; MOS DEVICES; SILICA;

STRESS-INDUCED LEAKAGE CURRENT (SILC);

GATES (TRANSISTOR);

EID: 0036865978     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.804709     Document Type: Article

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