High quality Al2O3 IPD with NH3 surface nitridation

IEEE Electron Device Letters

Volumn 24, Issue 8, 2003, Pages 503-505

  Chen, Yeong Yuh ^a   Chien, Chao Hsin ^b   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Al2O3; Aluminum oxide; Interpoly dielectric; IPD; Surface NH3 nitridation

Indexed keywords

ALUMINUM COMPOUNDS; AMMONIA; ANNEALING; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRON TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDING;

ALUMINUM OXIDE INTERPOLY CAPACITORS; SURFACE AMMONIA NITRIDATION;

CAPACITORS;

EID: 0042387927     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815152     Document Type: Article

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