Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2high-κ dielectric stacks

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1043-1046

  Zhang, W D ^a   Govoreanu, B ^b   Zheng, X F ^a   Ruiz Aguado, D ^b,c   Rosmeulen, M ^b   Blomme, P ^b   Zhang, J F ^a   Van Houdt, J ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Al2O3; Electron trap; Energy distribution; Flash memory; Floating gate; High dielectrics; Interpoly dielectric (IPD) layer; Pulsed C V

Indexed keywords

AL2O3; ELECTRON TRAP; ENERGY DISTRIBUTION; FLASH MEMORY; FLOATING GATE; INTERPOLY DIELECTRIC (IPD) LAYER; PULSED C-V;

SILICON COMPOUNDS;

EID: 50949125375     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001234     Document Type: Article

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