Frequency dependent charge-pumping, how deep does it probe?

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Wang, Y ^a   Lee, V ^a   Cheung, K P ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; FREQUENCY-DEPENDENT; HIGH-K DIELECTRICS; HIGH-K GATE DIELECTRICS; THEORETICAL MODEL;

ELECTRON DEVICES; GATES (TRANSISTOR);

GATE DIELECTRICS;

EID: 46049104943     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346898     Document Type: Conference Paper

References (23)

1. Degraeve et al., IEDM, pp935-938(2003).
2. Kerber et al., IRPS, pp41-45(2003).
3. Kerber et al., EDL-24(2): 87(2003).
4. Kerber et al., Conference on Insulating Film, pp267-272(2004).
5. Degraeve et al., IEDM, pp419-422(2005).
6. Young et al., IRPS, pp169-173(2006).
7. Tseng et al., IEDM, pp713-716(2005).
8. Backensto et al., IEDM,pp287-291(1976).
9. Russell et al., TED-30(12), 1662(1983).
10. Paulsen et al., EDL-13(12), 627(1992).
11. Paulsen et al., TED-41(7), 1213(1994).
12. Maneglia et al., Int. Semi. Conf. CAS. pp155-158(1995).
13. Bauza et al., Solid-State Electronics 39(4), 563(1996).
14. Maneglia et al., J. Appl. Phys. 79(8), 4187(1996).
15. Bauza et al., TED-44(12), 2262(1997).
16. Maneglia et al., Int. Semi. Conf. CAS, pp135-138(1997).
17. Maneglia et al., ICMTS, pp201-205(1998).
18. Maneglia et al., ICMTS, pp117-120(1999).
19. Heiman et al., TED-12(4), 167(1965).
20. Lundstrom et al., IEEE Trans. Nucl. Sci., 33, 1203(1986).
21. Hall, R. N. Phys. Rev. 87(2), 387(1952).
22. Shockley et al., Phys. Rev. 87(5), 835(1952).
23. Wang et al., ICMTS, pp99-102(2003).