SCOPUS 정보 검색 플랫폼

Volumn 80, Issue SUPPL., 2005, Pages 210-213

Reduction of fixed charges in atomic layer deposited Al 2O 3 dielectrics

(10) Buckley, J a De Salvo, B a Deleruyelle, D b Gely, M a Nicotra, G c Lombardo, S c Damlencourt, J F a Hollinger, Ph a Martin, F a Deleonibus, S a

a CEA LETI (France)

b AIX MARSEILLE UNIVERSITÉ (France)

c CNR IMM (Italy)

Author keywords

Al 2O 3; Fixed charges; High k

Indexed keywords

AL2O3; ATOMIC LAYER DEPOSITION; FIXED CHARGES; HIGH-K;

ALUMINA; ANNEALING; CONCENTRATION (PROCESS); DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; MOS DEVICES; SURFACE PROPERTIES; TEMPERATURE CONTROL; TRANSPORT PROPERTIES;

ELECTRIC CHARGE;

EID: 19944423819 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.04.070 Document Type: Conference Paper

Times cited : (50)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.