Fundamental understanding and optimization of PBTI in nFETs with SiO 2/HfO2 gate stack

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Cartier, E ^a   Linder, B P ^a   Narayanan, V ^a   Paruchuri, V K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

ELECTRICAL MEASUREMENTS; ENERGY DISTRIBUTIONS; TRAPPED ELECTRONS;

SILICON COMPOUNDS;

EID: 46049112509     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346773     Document Type: Conference Paper

References (11)

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11. N. Yang, K. W. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, p. 1464, 1999