Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn 2006-January, Issue , 2006, Pages 246-249

  Buckley, J ^a   Molas, G ^a   Gely M ^a   Martin, F ^a   De Salvo, B ^a   Deleonibus, S ^a   Pananakakis, G ^b   Bongiorno, C ^c   Lombardo, S ^c  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; FLASH MEMORY; SOLID STATE DEVICES; THRESHOLD VOLTAGE;

FLOATING GATE MEMORY; HIGH- K; NEGATIVE CHARGE; NON-VOLATILE MEMORY; OPERATING VOLTAGE; PROGRAMMING WINDOW; THRESHOLD VOLTAGE SHIFTS; TUNNEL OXIDES;

HIGH-K DIELECTRIC;

EID: 84957888455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/essder.2006.307684     Document Type: Conference Paper

References (8)

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