Novel high K inter-poly dielectric(IPD), Al2O3 for low voltage/high speed flash memories: Erasing in msec at 3.3 V

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 117-118

  Lee, W H ^a   Clemens, J T ^a   Keller, R C ^a   Manchanda, L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DIELECTRIC DEVICES; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; SEMICONDUCTOR STORAGE;

HIGH RETENTION FLASH MEMORY; INTERPOLY DIELECTRIC (IPD) MATERIALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030705629     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)