Distribution and generation of traps in SiO2/Al2O3 gate stacks

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 525-527

  Crupi, Isodiana ^a   Degraeve, Robin ^b   Govoreanu, Bogdan ^b   Brunco, David P ^b   Roussel, Philippe ^b   Van Houdt, Jan ^b  

^a CNR   (Italy)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC CHARGE MEASUREMENT; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); SILICA;

CHARGE PUMPING MEASUREMENTS; GATE PULSES; GATE STACKS; TRAP DENSITY;

CHARGE TRAPPING;

EID: 34247117334     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.013     Document Type: Article

References (6)

1. International technology roadmap for semiconductors, in http://public.itrs.net, (San Jose, CA), 2001.
2. Van Houdt J, High-K materials for nonvolatile memory applications, In: Proceedings of IRPS, 2005. p. 234-9.
3. Groeseneken G., Maes H.E., Beltran N., and Keersmaecker R.F.D. A reliable approach to charge-pumping measurements in MOS transistors. IEEE Trans Electron Dev ED-31 1 (1984) 42-53
4. 2 dual-layer gate dielectrics. IEEE Electron Dev Lett 24 2 (2003) 87-89
5. Weintraub C.E., Vogel E., Hauser J.R., Yang N., Misra V., Wortman J.J., et al. Study of low-frequency charge-pumping on thin stacked dielectrics. IEEE Trans Electron Dev 48 12 (2001) 2754-2762
6. 3 dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method. IEEE Trans Electron Dev 51 12 (2004) 2252-2255