Electrical characterisation of silicon-rich-oxide based memory cells using pulsed current-voltage techniques

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 471-474

  Rosmeulen, M ^a,b   Sleeckx, E ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MOS CAPACITORS; SILICON;

CURRENT VOLTAGE; ELECTRICAL CHARACTERISATION; GATE ELECTRODES; GATE OXIDE; MEMORY CELL; MOS-FET; PULSEWIDTHS;

SEMICONDUCTING SILICON;

EID: 84907709957     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194970     Document Type: Conference Paper

References (9)

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