Recent progress of high power GaN-HEMT for wireless application

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 2, Issue , 2006, Pages 1027-1032

  Joshin, Kazukiyo ^a   Kikkawa, Toshihide ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

GaN; HEMT; Power amplifier; Transistor; Wireless

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; BASE STATIONS; COMPUTER NETWORKS; DC GENERATORS; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MANAGEMENT INFORMATION SYSTEMS; METAL INSULATOR BOUNDARIES; MICROWAVES; MIS DEVICES; POWER AMPLIFIERS; POWER GENERATION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GALLIUM; SILICON CARBIDE; SWITCHING CIRCUITS; TECHNOLOGY;

ASIA PACIFIC; CONFERENCE PROCEEDINGS; DEVICE TECHNOLOGIES; GAN HEMT; GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); GATE-LEAKAGE CURRENTS; HIGH EFFICIENCY; HIGH POWERS; METAL-INSULATOR-SEMICONDUCTOR (MIS); OUTPUT POWERS; PRACTICAL APPLICATIONS; RF POWERING; SATURATION REGION; SIC SUBSTRATES; WIRELESS APPLICATIONS;

GALLIUM ALLOYS;

EID: 44949245719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2006.4429585     Document Type: Conference Paper

References (11)

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