Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 562-566

  Ha, Min Woo ^a   Lee, Seung Chul ^b   Kim, Soo Seong ^b   Yun, Chong Man ^b   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b Fairchild Korea Semiconductor Ltd   (South Korea)

Author keywords

AlGaN; BCB; GaN; Passivation

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GOLD; MESFET DEVICES; NICKEL; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

BENZOCYCLOBUTENE (BCB); ELECTRON INJECTION; SCHOTTKY GATE OXIDATION; SWITCHING SPEED;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33845370370     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.022     Document Type: Article

References (8)

1. D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa, Proc. Int. Electron Device Meeting Tech. Dig., Washington DC, 2005, p. 389
2. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., and Eastman L.F. IEEE Electron Device Lett. 21 (2000) 268
3. Vetury R., Zhang N.Q., Keller S., and Mishra U.K. IEEE Trans. Electron Devices 48 (2001) 560
4. Ha M.-W., Lee S.-C., Her J.-C., Seo K.-S., and Han M.-K. Japan. J. Appl. Phys. 45 (2006) 3391
5. Gillespie J.K., Fitch R.C., Sewell J., Dettmer R., Via G.D., Crespo A., Jenkins T.J., Luo B., Mehandru R., Kim J., Ren F., Gila B.P., Onstine A.H., Abernathy C.R., and Pearton S.J. IEEE Electron Device Lett. 23 (2002) 505
6. Wang W.-K., Lin C.-H., Lin P.-C., Lin C.-K., Huang F.-H., Chan Y.-J., Chen G.-T., and Chyi J.-I. IEEE Electron Device Lett. 25 (2004) 763
7. Khan M.A., Hu X., Sumin G., Lunev A., Yang J., Gaska R., and Shur M.S. IEEE Electron Device Lett. 21 (2000) 63
8. Lin Z., Kim H., Lee J., and Lu W. Appl. Phys. Lett. 84 (2004) 1585