Recent progress of GaN electronic devices for wireless communication system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Kikkawa, T ^a   Imanishi, K ^a   Hara, N ^a   Shigematsu, H ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Base station; Distortion; Efficiency; FET; GaN; HEMT; High k; Millimeter wave; MIS; Power amplifier

Indexed keywords

AMPLIFIERS (ELECTRONIC); CELLULAR TELEPHONE SYSTEMS; COMMUNICATION; COMPUTER NETWORKS; CUBIC BORON NITRIDE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROFLUIDICS; MOBILE COMPUTING; NITRIDES; PIGMENTS; SEMICONDUCTING GALLIUM; TELECOMMUNICATION SYSTEMS;

CURRENT STATUS; CURRENT VOLTAGE (I V) CHARACTERISTICS; DEVICE STRUCTURES; DRAIN EFFICIENCY; ELECTRONIC DEVICES; GAN HEMT; HIGH POWERS; HIGH TEMPERATURE (HT); HIGH-EFFICIENCY AMPLIFIERS; HIGH-RELIABILITY; LIFE TESTING; LINEAR GAIN; NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; OUTPUT POWERS; WIRELESS COMMUNICATION SYSTEMS;

GALLIUM NITRIDE;

EID: 42149097721     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772152     Document Type: Conference Paper

References (12)

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