179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate

Electronics Letters

Volumn 40, Issue 10, 2004, Pages 629-631

  Okamoto, Y ^a   Ando, Y ^a   Hataya, K ^a   Nakayama, T ^a   Miyamoto, H ^a   Inoue, T ^a   Senda, M ^b   Hirata, K ^b   Kosaki, M ^b   Shibata, N ^b   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

^b Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

DRAIN CURRENT; FIELD-MODULATING PLATE; OHMIC ELECTRODES;

FIELD EFFECT TRANSISTORS;

EID: 2942532393     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040421     Document Type: Article

References (7)

1. Mishra, U.K., Parikh, P., and Wu, Y.-F.: 'AlGaN/GaN HEMTs - an overview of device operation and application', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. Ando, Y., Okamoto, Y., Miyamoto, H., Hayama, N., Nakayama, T., Kasahara, K., and Kuzuhara, M.: 'A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate'. IEEE IEDM Tech. Dig., Washington D.C., December 2001, pp. 381-384
3. Eastman, L.F.: 'Experimental power-frequency limits of AlGaN/GaN HEMT's'. IEEE MTT-S Dig., Seattle, July 2002, pp. 2273-2275
4. Pribble, W.L., Palmour, J.W., Sheppard, S.T., Smith, R.P., Allen, S.T., Smith, T.J., Ring, Z., Sumakeris, J., Saxler, A.W., and Milligan, J.W.: 'Application of SiC MESFETs and GaN HEMTs in power amplifier design'. IEEE MTT-S Dig., Seattle, July 2002, pp. 1819-1822
5. Joshin, K., Kikkawa, T., Hayashi, H., Maniwa, T., Yokokawa, S., Yokokawa, M., Adachi, N., and Takikawa, M.: 'A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications'. IEEE IEDM Tech. Dig., Washington D.C., December 2003, pp. 983-085
6. Okamoto, Y., Ando, Y., Miyamoto, H., Nakayama, T., Inoue, T., and Kuzuhara, M.: 'An 80 W AlGaN/GaN heterojunction FET with a field-modulating plate'. IEEE MTT-S Digest, Philadelphia, June 2003, pp. 225-228
7. Okamoto, Y., Ando, Y., Hataya, K., Miyamoto, H., Nakayama, T., Inoue, M., and Kuzuhara, M.: '96 W AlGaN/GaN heterojunction FET with field-modulating plate', Electron. Lett., 2003, 39, pp. 1474-1475