Investigation on current collapse of AlGaN/GaN hfet by gate bias stress

IEICE Transactions on Electronics

Volumn E91-C, Issue 7, 2008, Pages 1004-1008

  Ao, Jin Ping ^a   Yamaoka, Yuya ^a   Okada, Masaya ^a   Hu, Cheng Yu ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN GaN; Current collapse; Gate bias stress; Heterojunction field effect transistor

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; HETEROJUNCTIONS; PASSIVATION;

ALGAN LAYERS; ALGAN/GAN; ALGAN/GAN HFETS; CURRENT COLLAPSE; GATE-BIAS STRESS; HETEROJUNCTION FIELD EFFECT TRANSISTOR; NEGATIVE CHARGE; PASSIVATION FILM;

FIELD EFFECT TRANSISTORS;

EID: 70449116483     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e91-c.7.1004     Document Type: Article

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