Present status and challenges of AlGaN/GaN HFETs

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 2230-2235

  Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL CONDUCTIVITY; WIRELESS TELECOMMUNICATION SYSTEMS;

BROAD-BAND WIRELESS ACCESS SYSTEMS; DEVICE PERFORMANCES; PIEZOELECTRIC POLARIZATION; SATURATION VELOCITY;

FIELD EFFECT TRANSISTORS;

EID: 21644484249     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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