Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 341-345

  Lee, Ching Ting ^a   Lin, Yow Jon ^a   Lee, Tsung Hsin ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GaN); Nickel oxide (NiOx); Ohmic contacts; Thermal annealing; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; OHMIC CONTACTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT-RESISTANCE;

NICKEL COMPOUNDS;

EID: 0037987843     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0155-6     Document Type: Conference Paper

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