X-band AlGaN/GaN HEMT with over 80W output power

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 265-268

  Takagi, Kazutaka ^a   Masuda, Kazutoshi ^a   Kashiwabara, Yasushi ^a   Sakurai, Hiroyuki ^a   Matsushita, Keiichi ^a   Takatsuka, Shinji ^a   Kawasaki, Hisao ^a   Takada, Yoshihani ^a   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; HEMT; Power amplifier; X band

Indexed keywords

ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); COMPOUND SEMICONDUCTOR (CS); GATE PERIPHERY; OPERATING CONDITIONS; OPERATING VOLTAGES; OUTPUT POWERS; POWER-ADDED EFFICIENCY (PAE); TEMPERATURE DEPENDENCES;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDE; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 46149092512     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319950     Document Type: Conference Paper

References (21)

1. T. Kikkawa, et.al., "An over 200-W output power GaN HEMT push-pull amplifier with high reliability", IEEE Int. Microwave Symp., "An over 200-W output power GaN HEMT push-pull amplifier with high reliability", pp.1347-1350 (2004)
2. Y. Okamoto, et.al., "Improved power Perfomance for a Recessed-Gate AlGaN/GaN Heterojunction FET With a Field-Modulating Plate", IEEE Trans. Microwave Theory and techniques, 52, 2536, (2004)
3. Y. Okamoto, et.al., "C-Band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power", 2005 IEEE MTT-S Int. Microwave Symp., paper WE1E-3
4. Y. Kamo, et.al., "A C-Band AlGaN/GaN HEMT with Cat -CVD SiN Passivation Developed for an over 100W Operation", 2005 IEEE MTT-S Int. Microwave Symp., paper WE1E-4
5. Y. Takada, et.al., "C-band AlGaN/GaN HEMTs with 170W Output Power", 2005 SSDM Int. Conf. I-6-5L
6. T. Inoue, Y. Ando, H. Miyamoto, and Y. Okamoto, et.al., "30GHz-band 5.8W High-Power AlGaN/GaN Heterojunction-FET". 2004 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1649-1652, June 2004.
7. F. van Raay, et.al., "A Coplanar X-Band AlGaN/GaN Power Amplifier MMIC on s.i. SiC Substrate", IEEE Microwave and Wireless Components Letters, vol.15 no.7, July 2005, pp460-462
8. M. van Heijningen, and F. van Raay, et.al., "Ka-Band AlGaN/GaN HEMT High Power and Driver Amplifier MMICs". GAAS 2005 Proceedings, Paris, France, October 2005, pp237-240
9. D. M. Fanning, et.al., "25W X-Band GaN on Si MMIC", CS MANTECH 2005 Conf. Proc., New Orleans, USA, April 11th-14th, 2005.
10. K. Yamanaka, et.al., "S and C band Over 100W GaN HEMT 1-chip High Power Amplifiers with Cell Division Configuration", 13th GAAS Symp., Paris, France, October 2005
11. R. Behtash, et.al., "Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band", 2004 IEEE MTT-S Int. Microwave Symp., Dig., pp. 1657-1659, June 2004.
12. th Device Research Conference, 2000. Conference Digest. 19-21 June 2000, pp37-38.
13. M. Micovic, et.al., "Ka-band MMIC Power Amplifier in GaN HFET Technoloy", 2004 IEEE MTT-S Int. Microwave Symp., Dig., pp. 1653-1656, June 2004.
14. Y.-F. Wu, M. Moore, et.al., "3.5-Watt AlGaN/GaN HEMTs and Amplifiers at 35 GHz", 2003 IEEE Int. Electron Device Meeting. Dig., pp. 579-581, December 2003.
15. Y.-F. Wu, et.al., "Very-High Power Density AlGaN/GaN HEMTs", Electron Devices, vol. 48, pp. 586-590, 2001
16. R. Thompson, et.al., "Improved Fabrication Process for Obtaining High Power Density AlGaN/GaN HEMTs", 2003 IEEE GaAs IC Symp., pp298-300, Nov. 2003.
17. N. Adachi, et.al., "High Temperature Operation of AlGaN/GaN HEMT", 2005 IEEE MTT-S Int. Microwave Symp. Dig., WEIE-7.
18. B. M. Green, et.al., "A GaN HFET Device Technology on 3" SiC Substrates for Wireless Infrastructure Applications", 2006 IEEE MTT-S Int. Microwave Symp., Dig., pp. 706-709, June 2006.
19. Arata Maekawa, et.al., "A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application", 2006 IEEE MTT-S Int. Microwave Symp., Dig., pp. 722-725, June 2006.
20. P. Schuh, et.al., "20W GaN HPAs for Next Generation X-Band T/R-Modules", 2006 IEEE MTT-S Int. Microwave Symp., Dig., pp. 726-729, June 2006.
21. A. M. Darwish, et.al., "4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC", 2006 IEEE MTT-S Int. Microwave Symp., Dig., pp. 726-729, June 2006.