Progress in GaN performances and reliability

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 35-36

  Saunier, P ^a   Lee, C ^a   Balistreri, A ^a   Dumka, D ^a   Jimenez, J ^a   Tserng, H Q ^a   Kao, M Y ^a   Chao, P C ^b   Chu, K ^b   Souzis, A ^c   Eliashevich, I ^d   Guo, S ^d   Del Alamo, J ^e   Jon, J ^e   Shur, M ^f  

^a TRIQUINT SEMICONDUCTOR   (United States)

^b BAE SYSTEMS   (United States)

^c II VI Inc   (United States)

^d IQE INC   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

AlGaN GaN; DARPA MTO; GaN; MMIC

Indexed keywords

BAE SYSTEMS (CO); COMMERCIAL APPLICATIONS; CRITICAL COMPONENTS; LOCKHEED-MARTIN (CO); MANUFACTURABILITY; RF TECHNOLOGIES; TRIQUINT SEMICONDUCTOR (CO); WIDE-BAND-GAP SEMICONDUCTORS;

ELECTRIC CONDUCTIVITY; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING GALLIUM;

EID: 47249087435     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373639     Document Type: Conference Paper

References (4)

1. Y-F Wu, et al., "30W/mm GaN HEMTs by Field Plate Optimization," IEEE EDL, vol.25, pp. 117-119, Nov. 2004.
2. R. Thompson, et al., "Performance of the AlGaN HEMT Structure with a Gate Extension," IEEE Transactions on Electron Devices, vol. 51, no. 2, pp. 292-295, Feb. 2004.
3. J. Joh, Jesus Del Alamo et Al. "Mechanisms for Electrical Degradation of GaN HEMTs," IEDM, San Francisco, CA, Dec. 2006.
4. J. Jimenez, "Failure Analysis of X-band GaN FETs," CSICS ROCS, San Antonio, TX, Nov. 2006.