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Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

Measurements of metal gate effective work function by x-ray photoelectron spectroscopy

(3) Lebedinskii, Yuri a Zenkevich, Andrei a Gusev, Evgeni P b,c

a MOSCOW STATE UNIVERSITY (Russian Federation)

b IBM T J WATSON RESEARCH CENTER (United States)

c QUALCOMM INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FUNCTION MODULATION; GATE ELECTRODES; METAL GATES; SILICIDATION;

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRODES; MOS CAPACITORS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 34247236202 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2713993 Document Type: Article

Times cited : (31)

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