Effect of gate edge silicidation on gate leakage current in AlGaN/GaN HEMTs

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Ohki, Toshihiro ^a   Kanamura, Masahito ^a   Okamoto, Naoya ^a   Imanishi, Kenji ^a   Makiyama, Kozo ^a   Joshin, Kazukiyo ^a   Kikkawa, Toshihide ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

GaN; Gate leakage current; HEMT; Power Amplifier

Indexed keywords

ALGAN/GAN HEMTS; GAN; GATE ELECTRODES; GATE-LEAKAGE CURRENT; HIGH TEMPERATURE; OXIDATION RATES; PASSIVATION FILM; SCHOTTKY JUNCTIONS;

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

LEAKAGE CURRENTS;

EID: 84887435287     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Y. Inoue et al., Degradation-mode analysis for highly reliable GaN-HEMT, IEEE IMS Technical Digest, pp. 639-642, June 2007.
2. K. Makiyama et al., Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance, IEEE IEDM Technical Digest, pp. 727-730, December 2003.
3. K. Makiyama, et al, High-fmax GaN-HEMT with high breakdown voltage over 100 V for millimeter-wave applications, Phys. Stat. Sol. (a) 204, pp. 2054-2058, 2006.
4. T. Kikkawa et al., Surface-charge-controlled AlGaN/GaN-power HFET without current collapse and Gm dispersion, IEEE IEDM Technical Digest, pp. 585-588, December 2001.
5. M. Kanamura, et al, AlGaN/GaN power HEMTs using surface-charge-controlled structure with recessed ohmic technique, Extended Abstracts of Int. Conf. Solid State Devices and Materials, pp. 916-917, September 2003.