Field-plate optimization of AlGaN/GaN HEMTs

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 107-110

  Palankovski, Vassil ^a   Vitanov, Stanislav ^a   Quay, Rüdiger ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; OPTICAL DESIGN; OPTIMIZATION; PLATES (STRUCTURAL COMPONENTS); SEMICONDUCTOR MATERIALS; TWO DIMENSIONAL;

ALGAN GAN; COMPOUND SEMICONDUCTOR (CS); DEVICE RELIABILITY; FIELD DISTRIBUTIONS; FIELD PLATE (FP); GA TE LENGTHS; SIMULATION DATA; TWO-DIMENSIONAL (2-D) NUMERICAL SIMULATION;

INTEGRATED CIRCUITS;

EID: 46149096232     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319926     Document Type: Conference Paper

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