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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 12, 2009, Pages

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

(12) Herrera, M a,c Ramasse, Q M b Morgan, D G a Gonzalez, D c Pizarro, J c Yanez A c Galindo, P c Garcia, R c Du, M H d Zhang, S B e Hopkinson, M f Browning, N D a,g

a University of California Davis (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c UNIVERSITY OF CÁDIZ (Spain)

d OAK RIDGE NATIONAL LABORATORY (United States)

e Rensselaer Polytechnic Institute (United States)

f UNIVERSITY OF SHEFFIELD (United Kingdom)

g LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350646937 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.125211 Document Type: Article

Times cited : (20)

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