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Volumn 61, Issue 11, 2000, Pages 7479-7482

Formation of an impurity band and its quantum confinement in heavily doped GaAs:N

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EID: 0000399294     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.7479     Document Type: Article
Times cited : (148)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.