Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Herrera, M ^a   Gonzalez D ^a   Lozano, J G ^a   Garcia R ^a   Hopkinson, M ^b   Liu, H Y ^b   Gutierrez, M ^b   Navaretti, P ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION LOOPS; FAULT ENERGY; PHOTOLUMINESCENCE INTENSITY; THREADING DISLOCATIONS;

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTODIODES; PHOTOLUMINESCENCE; PROBABILITY DISTRIBUTIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM COMPOUNDS;

EID: 23844486782     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1988976     Document Type: Article

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