Structural and optical properties of high in and N content GaInNAs quantum wells

Thin Solid Films

Volumn 483, Issue 1-2, 2005, Pages 185-190

  Herrera, M ^a   Gonzalez D ^a   Garcia R ^a   Hopkinson, M ^b   Navaretti, P ^b   Gutierrez M ^b   Liu, H Y ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

GaInNAs; Molecular beam epitaxy; Photoluminescence; Transmission electron microscopy

Indexed keywords

MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR LASERS; STRESS CONCENTRATION; TRANSMISSION ELECTRON MICROSCOPY;

COALESCE REACTIONS; OPTICAL EFFICIENCY; STRUCTURAL DEFECTS; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18844457836     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.016     Document Type: Article

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