Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2103-2105

  Takeguchi, M ^a,b   McCartney, M R ^a   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE FRINGES; STARK EFFECT;

BAND STRUCTURE; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; HOLOGRAPHY; LIGHT EMISSION; MODULATION; PARAMETER ESTIMATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1942444667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689400     Document Type: Article

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