Mechanisms of nitrogen incorporation in GaAsN alloys

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1692-1694

  Reason, M ^a   McKay, H A ^a   Ye, W ^a   Hanson, S ^a   Goldman, R S ^a   Rotberg, V ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SURFACE CONTAMINATION; SURFACE EXCHANGE;

ANNEALING; CONTAMINATION; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION); SUBSTITUTION REACTIONS; SUBSTRATES; SURFACE PHENOMENA;

GALLIUM ALLOYS;

EID: 5044226461     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789237     Document Type: Article

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