Quantitative strain mapping applied to aberration-corrected HAADF images

Microscopy and Microanalysis

Volumn 12, Issue 4, 2006, Pages 285-294

  Sanchez, Ana M ^a   Galindo, Pedro L ^a   Kret, Slawomir ^b   Falke, Meiken ^c   Beanland, Richard ^d   Goodhew, Peter J ^e  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b POLISH ACADEMY OF SCIENCES   (Poland)

^c DARESBURY LABORATORY   (United Kingdom)

^d Bookham Technology plc   (United Kingdom)

^e UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Algorithm; Distortion; HAADF; InAs; Nanostructures; STEM; Strain

Indexed keywords

EID: 33746254034     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927606060363     Document Type: Article

References (13)

1. BEANLAND, R. (2003). Rapid cross-section TEM specimen preparation of III-V materials. Microsc Today 11, 29-31.
2. BIERWOLF, R., HOHENSTEIN, M., PHILLIPP, F., BRANDT, O., CROOK, G.E. & PLOOG, K. (1993). Direct measurement of local lattice-distortions in strained layer structures by HREM. Ultramicroscopy 49, 273-285.
3. BITHELL, E.G. & STOBBS, W.M. (1989). Composition determination in the GaAs/(Al, Ga)As system using contrast in dark-field transmission electron-microscope images. Philos Mag A 60, 39-62.
4. BITHELL, E.G. & STOBBS, W.M. (1991). III-V ternary semiconductor heterostructures - The choice of an appropriate compositional analysis technique. J Appl Phys 69, 2149-2155.
5. GALINDO, P.L., YAÑEZ, A., PIZARRO, J., GUERRERO, E., BEN, T. & MOLINA, S.I. (2006). Strain mapping from HRTEM images. In Proceedings of the Microscopy of Semiconducting Materials XIV Conference. Oxford: Institute of Physics (in press).
6. HŸTCH, M.J. & PLAMANN, T. (2001). Imaging conditions for reliable measurement of displacement and strain in high-resolution electron microscopy. Ultramicroscopy 87, 199-212.
7. HŸTCH, M.J., SNOECK, E. & KILAAS, R. (1998). Quantitative measurement of displacement and strain fields from HREM micrographs. Ultramicroscopy 74, 131-146.
8. KRET, S., RUTERANA, P., ROSENAUER, A. & GERTHSEN, D. (2001). Extracting quantitative information from high resolution electron microscopy. Phys Stat Sol B 227, 247-295.
9. KRIVANEK, O.L., DELLBY, N. & LUPINI, A.R. (1999). Towards subangstrom electron beams. Ultramicroscopy 78, 1-11.
10. ROSENAUER, A. (2003). Transmission Electron Microscopy of Semiconductor Nanostructures. An Analysis of Composition and Strain State. Berlin: Springer.
11. ROSENAUER, A., REMMELE, T., GERTHSEN, D., TILLMANN, K. & FÖRSTER, A. (1997). Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images. Optik 105, 99-107.
12. RUTERANA, R., KRET, S., MACIEJEWSKI, G. & DLUZEWSKI, P. (2002). Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers. J Appl Phys 91, 8979-8985.
13. SANCHEZ, A.M., GALINDO, P.L., KRET, S., FALKE, M., BEANLAND, R. & GOODHEW, P.J. (2006). An approach to the systematic distortion correction in aberration corrected HAADF images. J Microsc 221, 1-7.