Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 426-430

  Iliopoulos, E ^a,b   Adikimenakis, A ^a,b   Dimakis, E ^a,b   Tsagaraki, K ^a,b   Konstantinidis, G ^a,b   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; IONIZATION; MOLECULAR BEAM EPITAXY; NITROGEN;

ATOMIC NITROGEN; GAS FLOW RATE; NITRIDE GROWTH; NITROGEN ATOMS;

PLASMAS;

EID: 18444418874     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.013     Document Type: Conference Paper

References (8)

1. A. Georgakilas, Ph. Komninou, and H.M. Ng P. Ruterana M. Albrecht J. Neugebauer Nitride Semiconductors: Handbook on Materials and Devices 2003 Wiley-VCH Verlag GmbH Berlin
2. T.D. Moustakas J. Pankove T.D. Moustakas Gallium Nitride (GaN) II, Semiconductors and Semimetals vol. 57 1997 Academic Press New York
3. T.D. Moustakas, and R.J. Molnar Mat. Res. Soc. Symp. Proc. 281 1993 753
4. R.P. Vaudo, J.W. Cook, and J.F. Schetzina J. Crystal Growth A 138 1994 40
5. A.J. Ptak, M.R. Millechia, T.H. Myers, K.S. Ziemer, and C.D. Stinespring Appl. Phys. Lett. 74 1999 3836
6. N. Newman J. Crystal Growth 178 1997 102
7. A.N. Wright, and C.A. Winkler Active Nitrogen 1968 Academic Press New York
8. A.V. Blant, O.H. Hughes, T.S. Cheng, S.V. Novikov, and C.T. Foxon Plasma Sources Sci. Technol. 9 2000 12