Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4427-4429

  Dhar, S ^a   Halder, N ^a   Mondal, A ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Characterization; Deep levels; Dilute nitrides; Photoluminescence

Indexed keywords

COMPLEXATION; ELECTRON TRAPS; ENERGY GAP; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS;

BAND GAPS; DILUTE NITRIDES; PHOTOCAPACITANCE MEASUREMENTS; TEMPERATURE PHOTOLUMINESCENCE (PL);

LIQUID PHASE EPITAXY;

EID: 33847073853     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.116     Document Type: Article

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