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Volumn 105, Issue 4, 2009, Pages

Composition and strain contrast of Si1-x Gex (x=0.20) and Si1-y Cy (y0.015) epitaxial strained films on (100) Si in annular dark field images

(2) Wu, X a Baribeau, J M a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DETECTORS; ENERGY DISSIPATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

ADF STEMS; ANALYTICAL TEM; ATOMIC NUMBERS; ATOMIC SCATTERINGS; COMPOSITION PROFILES; DARK FIELDS; DARK-FIELD IMAGES; ELECTRON ENERGY LOSS; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; IMAGE CONTRASTS; INTENSITY LINES; LOWER AVERAGES; SAMPLE THICKNESS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SECONDARY IONS; STRAIN CONTRASTS; STRAINED EPITAXIAL FILMS; STRAINED FILMS; TEM;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 61449101713 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3082019 Document Type: Article

Times cited : (11)

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