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Volumn 31, Issue , 2008, Pages 77-79
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Nitrogen interstitial defects in GaNAs films grown by MOCVD
a
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Author keywords
GaNAs; MOCVD; Photoluminescence; Thermal anneal
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Indexed keywords
ANNEALING;
CARBON NANOTUBES;
CHEMICAL VAPOR DEPOSITION;
DEFECTS;
ENERGY GAP;
EPITAXIAL GROWTH;
FILM GROWTH;
GALLIUM ALLOYS;
LIGHT EMISSION;
LUMINESCENCE;
NITROGEN;
NONMETALS;
PHOTONICS;
PIGMENTS;
RAPID THERMAL PROCESSING;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
TECHNOLOGY;
ADVANCED TECHNOLOGIES;
BAND GAP TRANSITIONS;
BAND-GAP EMISSIONS;
DEFECT EMISSIONS;
DEFECT RELATED EMISSIONS;
ENERGY-BAND GAPS;
EPI LAYERS;
HIGH INTENSITY;
INTERNATIONAL CONFERENCES;
INTERSTITIAL DEFECTS;
MOCVD GROWTH;
N CONTENT;
NANO-STRUCTURED;
PHOTOLUMINESCENCE (PL) MEASUREMENTS;
PHOTON ENERGIES;
RAPID THERMAL ANNEAL (RTA);
TIME-RESOLVED PHOTOLUMINESCENCE (PL) SPECTRA;
V/III RATIO;
EMISSION SPECTROSCOPY;
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EID: 45749099351
PISSN: 10226680
EISSN: None
Source Type: Book Series
DOI: 10.4028/0-87849-471-5.77 Document Type: Conference Paper |
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Times cited : (1)
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References (5)
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