The microstructural influence of nitrogen incorporation in dilute nitride semiconductors

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Chalker, P R ^a   Bullough, T J ^a   Gass, M ^a   Thomas, S ^a   Joyce, T B ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; MICROSTRUCTURE; NITRIDES; NITROGEN; PLASMA FLOW; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SOLUBILITY; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

DILUTE NITRIDES; EPILAYERS; NITROGEN INCORPORATION; PLASMON FREQUENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4043095497     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/012     Document Type: Article

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