Defects in dilute nitrides

Acta Physica Polonica A

Volumn 108, Issue 4 PART 1, 2005, Pages 571-579

  Chen, W M ^a   Buyanova, I A ^a   Tu, C W ^b   Yonezu, H ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; GALLIUM NITRIDE; MAGNETIC RESONANCE; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

DILUTE NITRIDES; OPTICAL QUALITY; PHOTONIC DEVICES;

NITRIDES;

EID: 28044458154     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/aphyspola.108.571     Document Type: Conference Paper

References (24)

1. For a recent review, see Physics and Applications of Dilute Nitrides, Eds. I.A. Buyanova, W.M. Chen, Taylor & Francis Books, Inc., New York 2004.
2. M. Kondow, K. Uomi, A. Niwa, T. Kitani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys. 33, L1056 (1994).
3. J.S. Harris, in Ref. [1], p. 395.
4. H. Riechert, A. Ramakrishnan, G. Steinle, Semicond. Sci. Technol. 17, 892 (2002).
5. D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson, J. Cryst. Growth 195, 409 (1998).
6. J.F. Geisz, D.J. Friedman, Semicond. Sci. Technol. 17, 769 (2002).
7. K. Momose, H. Yonezu, Y. Fujimoto, Y. Furukawa, Y. Motomura, K. Aiki, Appl. Phys. Lett. 79, 4151 (2001).
8. H. Yonezu, Semicond. Sci. Technol. 17, 762 (2002).
9. R. Fehse, A.R. Adams, in Ref. [1], p. 339.
10. D.J. Freidman, J.F. Geisz, A.J. Ptak, in Ref. [1], p. 371.
11. W.M. Chen, B. Monemar, Appl. Phys. A 53, 130 (1991).
12. W.M. Chen, Thin Solid Films 364, 45 (2000).
13. W.M. Chen, in: EPR of Free Radicals in Solids Trends in Methods and Applications, Eds. A. Lund, M. Shiotani, Kluwer Academic Pub., Dordrecht 2003, p. 601.
14. N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin, C.W. Tu, Phys. Rev. B 63, 033203 (2001).
15. N.Q. Thinh, I.A. Buyanova, P.N. Hai, W.M. Chen, H.P. Xin, C.W. Tu, Appl. Phys. Lett. 9, 3089 (2001).
16. W.M. Chen, N.Q. Thinh, I.A. Buyanova, H.P. Xin, C.W. Tu, MRS Symp. Proc. 692, 67 (2002).
17. For a review, see, e.g., F.K. Koschnick, J.-M. Spaeth, Phys. Status Solidi B 216, 817 (1999).
18. H.-J. Sun, G.D. Watkins, F.C. Rong, L. Fotiadis, E.H. Poindexter, Appl. Phys. Lett. 60, 718 (1992).
19. F.K. Koschnick, M. Linde, J.-M. Spaeth, D.C. Look, D. Bliss, W. Walukiewicz, Semicond. Sci. Technol. 7, 1037 (1992).
20. S.B. Zhang, S.H. Wei, Phys. Rev. Lett. 86, 1789 (2001).
21. N.Q. Thinh, I.P. Vorona, I.A. Buyanova, W.M. Chen, Sukit Limpijumnong, S.B. Zhang, Y.G. Hong, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu, Phys. Rev. B 70, 121201(R) (2004).
22. N.Q. Thinh, I.P. Vorona, I.A. Buyanova, W.M. Chen, Sukit Limpijumnong, S.B. Zhang, Y.G. Hong, H.P. Xin, C.W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu, Phys. Rev. B 71, 125209 (2005).
23. T.A. Kennedy, M.G. Spencer, Phys. Rev. Lett. 57, 2690 (1986).
24. N.Q. Thinh, I.P. Vorona, M. Izadifard, I.A. Buyanova, W.M. Chen, Y.G. Hong, H.P. Xin, C.W. Tu, Appl. Phys. Lett. 85, 2827 (2004).