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Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6095-6099

Nitrogen-related electron traps in Ga(As,N) layers (≤3%N)

(4) Krispin, P a Gambin, V b Harris, J S b Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; ELECTRON TRAPS; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

CAPACITANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM;

EID: 0037636445 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1568523 Document Type: Article

Times cited : (78)

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